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XP162A12A6PR-G
ETR1126_003
Power MOSFET
■ GENERAL DESCRIPTION
The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■ APPLICATIONS
● Notebook PCs
● Cellular and portable phones
■ FEATURES
Low On-State Resistance : Rds(on) = 0.17 Ω @ Vgs = -4.5V
: Rds(on) = 0.3 Ω @ Vgs = -2.5V
Ultra High-Speed Switching
● On-board power supplies
Dribing Voltage
: -2.5V
● Li-ion battery systems
Gate Protect Diode Built-in
P-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
■ PIN CONFIGURATION/
■ PRODUCT NAME
MARKING
PRODUCTS
XP162A12A6PR
PACKAGE
SOT-89
ORDER UNIT
1,000/Reel
G : Gate
XP162A12A6PR-G
(*)
SOT-89
1,000/Reel
S : Source
D : Drain
(*)
The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
* x represents production lot number.
■ EQUIVALENT CIRCUIT
■ ABSOLUTE MAXIMUM RATINGS
Ta = 25 ℃
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Channel Power Dissipation *
Channel Temperature
Storage Temperature
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
-20
± 12
-2.5
-10
-2.5
2
150
-55~150
V
V
A
A
A
W
℃
℃
* When implemented on a ceramic PCB
1/5
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